Current status of heterojunction bipolar and high-electron mobility transistor technologies
نویسندگان
چکیده
منابع مشابه
Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications
Metamorphic buffers ~M-buffers! consisting of graded InAlAs or bulk InP were employed for the production of InP-based epiwafers on GaAs substrates by molecular-beam epitaxy. The graded InAlAs is the standard for production metamorphic high electron mobility transistors ~M-HEMTs!, while the bulk InP offers superior thermal properties for higher current density circuits. The surface morphology an...
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ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 1992
ISSN: 0167-9317
DOI: 10.1016/0167-9317(92)90443-u